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Thursday, July 16, 2020 | History

2 edition of Solid/melt interface studies of high-speed silicon sheet growth found in the catalog.

Solid/melt interface studies of high-speed silicon sheet growth

Solid/melt interface studies of high-speed silicon sheet growth

final technical progress report, July 15, 1983 - July 15, 1984.

  • 398 Want to read
  • 10 Currently reading

Published by Solar Energy Research Institute, Solid State Research Branch in Golden, CO .
Written in English

    Subjects:
  • Solar cells.,
  • Crystal growth.

  • Edition Notes

    SeriesNASA CR -- 176112., NASA contractor report -- NASA CR-176112.
    ContributionsUnited States. National Aeronautics and Space Administration.
    The Physical Object
    FormatMicroform
    Pagination1 v.
    ID Numbers
    Open LibraryOL17659102M

    This has made possible the rapid growth of additive manufacturing since its initiation in Over the next two decades, the annual growth rate of worldwide revenues of all additive manufacturing products and services was %, but from to the growth rate was %. This book . Get this from a library! Advanced material science and technology: selected, peer reviewed papers from the 7th International Forum on Advanced Material Science and Technology, June , , Dalian, China, IFAMST [Yi Tan; Ju Dongying;].

    The main advantage of this technology is that it permits high-speed continuous processing, especially in extrusion. A specially designed screw is necessary to generate high pressure in the mixing section, which then enables the dissolution of gas in the melt and thus the formation of . The European plastics processing industry faces intense competition from lower wage economies and an alarming rise in energy prices. To remain competitive a business must have an effective energy management process, good market knowledge and an awareness of technology and .

    where B is a material constant. Reactions of this type are limited by the rate of transport of unreacted atoms to the interface, and it is the diffusivity that is responsible for their Arrhenius behavior. Most compound forming solid-state reactions, including oxide growth, are diffusion- rather than interface limited. Thermal Stress. SECTION AUTHOR INDEX F R O The reference number in parentheses refers to the monthly issue oi Ceramic Abstracts; the number following is the page number. The letter B or P preceding the reference number indicates an abstract of (13) a book, bulletin, or separate publication or (P) a patent. The italic letter following the page number indicates the position of the abstract on the page.


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Solid/melt interface studies of high-speed silicon sheet growth Download PDF EPUB FB2

Get this from a library. Solid/melt interface studies of high-speed silicon sheet growth: quarterly technical progress report 1, J - Octo [T F Ciszek; Solar Energy Research Institute.

Solid State Research Branch.; Jet Propulsion Laboratory (U.S.);]. T.F. Ciszek, "Solid/Melt Interface Studies of High‑Speed Silicon Sheet Growth," Final Report, DOE/JPL Contract WO‑83‑1, ().

T.F. Ciszek, "Some Applications of Cold Crucible Technology for Silicon Photovoltaic Material Preparation," J. Electrochemical Soc. () Solid/melt interface studies of high-speed silicon sheet growth. Final technical progress report, J J Large-area silicon sheet growth is one of the important elements of photovoltaic modules.

In order to reduce the cost of these modules, a number of silicon sheet growth approaches encompassing both the ingot and the. Silicon nitride (SiNx) thin films were deposited on () Si wafers in a molecular-beam epitaxy growth chamber equipped with a customized multipocket electron-beam.

Sintering or frittage is the process of compacting and forming a solid mass of material by heat or pressure without melting it to the point of liquefaction.

Sintering happens naturally in mineral deposits or as a manufacturing process used with metals, ceramics, plastics, and other atoms in the materials diffuse across the boundaries of the particles, fusing the particles.

After melting at K with a holding time of 30 min and a pulling rate of 10 μm/s, the primary silicon and Al–Si alloy are separated with a blurry interface, as shown in sample A.

For the 3 kHz induction furnace, a clear dividing line is shown between the primary silicon. Detailed discussions of various numerical issues in bulk crystal growth in general and for case studies of silicon and for high speed growth of cesium iodide as a model system for halide.

Handbook of Semiconductor Silicon Technology() - Free ebook download as PDF File .pdf), Text File .txt) or read book online for free. Nowadays, researchers have technologically challenged to grow these layers on wide area and with mass production.

On the other hand, it has been known that searches and discoveries of novel monatomic layers have conventionally been achieved on solid surfaces, based on surface science.Already in –70s, pioneering works on a “single-layer graphite” has been made on surfaces of.

More interestingly, the configurations of borophene are substrate-dependent. Predicted by theoretical calculations, buckled borophene prefers to form on Au substrate with vertical atomic undulation, while the planar polymorphs are favored on more reactive substrate such as Ag, Cu, or Ni [].When an electron-donating metallic substrate is adopted, the arrangement of boron atoms prefers to be a.

MyCreativity Reader. The INC Reader series are derived from conference contributions and produced by the Institute of Network Cultures. They are available in print and pdf form. Growth and Fabrication of GaN Light Emitting Diode on Patterned-Sapphire Substrate Electrochemical Studies of Epoxy Based Lignosulfonate Doped Double Stranded Polyaniline-Montmorillonite Nanocomposite Coatings on AA Alloy Visualization of Bubble Behavior in Water Electrolyzer with High-Speed Camera.

Maeda, Y. / Tsukamoto, S. / Ito. studies) on heterogeneous nucleation, fragmentation of primary crystals and intermetallic phases and de-agglomeration mechanisms. Alternative to the in-situ radiography techniques, observation of organic transparent analogues (e.g., succinonitrile (SCN)-1 wt.% camphor alloy) using a high-speed.

nd ECS meeting abstracts [jointly held with the fall meeting of the Electrochemical Society of Japan (ECSJ); also referred to as PRIME (Pacific RIM Meeting on Electrochemical and Solid-State Science) - joint international meeting]; Honolulu, Hawaii, USA, 7 - 12 October / [The Electrochemical Society] ; Vol.

7 (English). Search metadata Search text contents Search TV news captions Search radio transcripts Search archived web sites Advanced Search. An illustration of an open book. Books. An illustration of two cells of a film strip. Video. An illustration of an audio speaker.

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Microstructural Fractal Dimension of AISI L Steel - PDF. the wires may be used to preclean the bell enclosure prior to the silicon growth cycle; and the wires may be operated at higher temperatures to accelerate polysilicon growth (center-core rod melt out occurs at a higher temperature for Rogers/Heitz-grown silicon than for Siemens-grown silicon.).

Capillary Flow, Elastic Effects in Capillary Flows, Sheet Forming and Film Casting, Tube, Blown Film, and Parison Forming, Wire Coating, Profile Extrusion, 13. Transcription. PROCEEDINGS 3rd CROATIAN MICROSCOPY CONGRESS.Introduction Basic Principles of Numerical Control Machining Center Features and Trends Ultra-High-Speed Machining Centers (UHSMCs) Summary Case Study Process Planning for the MfE.

Chapter 23 Drilling and Related Hole-Making Processes.This is the case for the combination of laser and GMAW processes.

This combination provides high speed and good fit-up tolerance. High power lasers, such as CO2 lasers, needed for high speed welding of metals, require large floor space, considerable electrical and water services and regular maintenance.